Semiconductor device

ABSTRACT

A semiconductor device includes: a semiconductor element; a die pad with the semiconductor element mounted thereon; a plurality of electrode terminals each having a connecting portion electrically connected with the semiconductor element; and a sealing resin for sealing the semiconductor element, the die pad and the electrode terminals so that a surface of each electrode terminal on an opposite side from a surface having the connecting portion is exposed as an external terminal surface. A recess having a planar shape of a circle is formed on the surface of each electrode terminal with the connecting portion, and the recess is arranged between an end portion of the electrode terminal exposed from an outer edge side face of the sealing resin and the connecting portion. While a function of the configuration for suppressing the peeling between the electrode terminal and the sealing resin can be maintained by mitigating an external force applied to the electrode terminal, the semiconductor device can be downsized.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a surface mounted resin sealing typesemiconductor device.

2. Related Background Art

In recent years, a smaller and thinner semiconductor device has beendeveloped to make it commensurate with miniaturized and high-densityelectronic equipment. As a smaller and thinner resin sealing typesemiconductor device, a semiconductor device called “Quad FlatNon-leaded Package (QFN)” or “Small Outline Non-leaded Package (SON)” inwhich one side is sealed substantially is being developed. As a methodfor manufacturing such a semiconductor device, in order to reduce anassembly cost, a method in which resin-sealing is conducted collectivelywith respect to a plurality of semiconductor devices, followed by dicingprocessing to divide into the individual semiconductor devices isbecoming mainstream.

The following describes the semiconductor device disclosed in JP11(1999)-74440 A as a conventional example, with reference to FIGS. 15Ato C. FIG. 15A is a plan view showing a schematic configuration of theconventional QFN type (SON type) resin sealing type semiconductordevice, FIG. 15B is a cross-sectional view and FIG. 15C is a bottom viewof the same. In this semiconductor device, an adhesive 3 is applied to adie pad 1 that is supported by a support lead 16, and a semiconductorelement 2 is adhered thereon. On the periphery of the die pad 1, aplurality of electrode terminals 5 are disposed, and a top face of eachelectrode terminal 5 and the semiconductor element 2 are connectedelectrically with each other via a thin metal wiring 4.

The die pad 1, the semiconductor element 2, the adhesive 3, the thinmetal wiring 4 and the electrode terminals 5 are sealed with a sealingresin 7. The support lead 16 is subjected to bending so that the die pad1 is embedded in the sealing resin 7. The sealing resin 7 is shaped in aquadrilateral flat plate form, and an under surface of the electrodeterminal 5 on the reverse side of the surface connected with thesemiconductor element 2 is exposed from a bottom face of the sealingresin 7. In addition, an end face of the electrode terminal 5 on theside of an outer edge of the sealing resin 7 is exposed from a side faceof the sealing resin 7 continuously from the under surface exposed fromthe bottom face of the sealing resin 7. At the top of the electrodeterminal 5, a groove 6 is formed. The groove 6 is formed so as to reducethe stress generated when dividing into the individual semiconductordevices from a lead frame (not illustrated) and to suppress the peelingbetween the electrode terminal 5 and the sealing resin 7 due to thestress generated before and after mounting the device into a board,whereby a break in the thin metal wiring 4 can be prevented.

The following describes the conventional example using a method ofconducting resin-sealing with respect of a plurality of semiconductordevices and dividing it into the individual semiconductor devices bydicing processing in order to reduce an assembly cost, with reference toFIGS. 16A to C. This device is a conventional QFN type (SON type) resinsealing type semiconductor device. FIG. 16A is a plan view, FIG. 16B isa cross-sectional view and the FIG. 16C is a bottom view of the same.For simplifying the description, the same reference numerals areassigned to elements common to the above-described conventional exampleto describe them. In this semiconductor device, a support lead 9 is halfetched at a rear face thereof so as to be embedded in a sealing resin 7.An end face of the electrode terminal 5 on the side of an outer edge ofthe sealing resin 7 is exposed from a side face of the sealing resin 7discontinuously from an under surface exposed from a bottom face of thesealing resin 7. That is to say, as shown in FIG. 16B, a corner of theelectrode terminal 5 located at a boundary between the bottom face andthe outer end face of the sealing resin 7 is removed so as to form adiscontinuously exposed state. As shown in FIG. 16C, for the purpose ofmaking the semiconductor device thinner and enhancing the heatdissipation capability, a rear face of the die pad 1, which is on theopposite side from the semiconductor element-mounting surface, might beexposed from the sealing resin 7.

In these QFN type (SON type) semiconductor devices, one-side sealing isconducted so that the electrode terminals 5 are exposed from the bottomface of the sealing resin 7, which allows the semiconductor devices tobe smaller and thinner.

However, in the configuration of the conventional semiconductor devices,the formation of the groove 6 on the electrode terminal 5 by etchingcauses the width of the groove to expand to an extent corresponding tothe thickness of the lead frame. Therefore, the electrode terminal 5 isrequired to have a length sufficient to secure the groove width, so thatthere is a limit to shortening of the electrode terminal 5, thus makingfurther miniaturization of the semiconductor device difficult.

Additionally, when a method of conducting the resin-sealing collectivelywith respect of a plurality of semiconductor devices and dividing itinto the individual semiconductor devices by dicing processing isemployed in order to reduce an assembly cost, the dicing processingcauses metal burrs on the electrode terminal 5. Since these burrs leadto a problem when packaging the device into a board, the corner of theelectrode terminal 5 has to be removed so that the electrode terminal 5is exposed discontinuously from the under surface to the end face, whichmeans that the corner of the electrode terminal 5 is not exposed fromthe outer edge of the bottom face of the sealing resin 7 as shown inFIGS. 16B and C. In this case, an outer edge portion of the electrodeterminal 5 has to be half-etched to be embedded into the sealing resin7, thus making it quite difficult to shorten the electrode terminal 5.

SUMMARY OF THE INVENTION

In order to cope with the above-described conventional problems, it isan object of the present invention to provide a semiconductor devicethat allows the suppression of a break in a thin metal wiring caused bythe peeling between an electrode terminal and a sealing resin, andenables further miniaturization of the semiconductor device byshortening the electrode terminal, and provide a method formanufacturing the same.

The semiconductor device according to the present invention includes: asemiconductor element; a die pad on which the semiconductor element ismounted; a plurality of electrode terminals, each of which has aconnecting portion electrically connected with the semiconductorelement; and a sealing resin for sealing the semiconductor element, thedie pad and the electrode terminals so that a surface of each of theplurality of electrode terminals on an opposite side from a surfacehaving the connecting portion is exposed from the sealing resin as anexternal terminal surface. A recess having a planar shape of a circle isformed on the surface of each of the electrode terminals with theconnecting portion, and the recess is arranged between an end portion ofthe electrode terminal exposed from an outer edge side face of thesealing resin and the connecting portion.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a plan view showing a schematic configuration of asemiconductor device according to Embodiment 1, FIG. 1B is across-sectional view and FIG. 1C is a bottom view of the same.

FIG. 2A is a plan view showing a modification of the semiconductordevice of FIG. 1 and FIG. 2B is a cross-sectional view of the same.

FIG. 3 is a plan view of a lead frame used for manufacturing thesemiconductor device of FIG. 1.

FIG. 4A is a plan view showing a schematic configuration of asemiconductor device according to Embodiment 2, FIG. 4B is across-sectional view and FIG. 4C is a bottom view of the same.

FIG. 5A is a plan view showing a schematic configuration of asemiconductor device according to Embodiment 3, FIG. 5B is across-sectional view and FIG. 5C is a bottom view of the same.

FIG. 6A is a plan view showing a schematic configuration of asemiconductor device according to Embodiment 4, FIG. 6B is across-sectional view and FIG. 6C is a bottom view of the same.

FIG. 7A is a plan view showing a schematic configuration of asemiconductor device according to Embodiment 5, FIG. 7B is across-sectional view and FIG. 7C is a bottom view of the same.

FIG. 8A is a plan view showing a schematic configuration of asemiconductor device according to Embodiment 6, FIG. 8B is across-sectional view and FIG. 8C is a bottom view of the same.

FIGS. 9A to E show a method for manufacturing a lead frame used formanufacturing the conventional semiconductor device, where FIG. 9A is aplan view showing a surface-side resist pattern for etching, FIG. 9B isa plan view showing a schematic configuration of an electrode terminal,and FIGS. 9C to E are cross-sectional views showing states beforeetching, during etching and after etching, respectively.

FIGS. 10A to E show a method for manufacturing a lead frame used formanufacturing the semiconductor device according to Embodiment 5, whereFIG. 10A is a plan view showing a surface-side resist pattern foretching, FIG. 10B is a plan view showing a schematic configuration of anelectrode terminal, and FIGS. 10C to E are cross-sectional views showingstates before etching, during etching and after etching, respectively.

FIGS. 11A to E show a method for manufacturing a lead frame used formanufacturing the semiconductor device according to Embodiment 6, whereFIG. 11A is a plan view showing a surface-side resist pattern foretching, FIG. 11B is a plan view showing a schematic configuration of anelectrode terminal, and FIGS. 11C to E are cross-sectional views showingstates before etching, during etching and after etching, respectively.

FIGS. 12A to C are cross-sectional views showing a process formanufacturing a lead frame used for manufacturing a semiconductor deviceaccording to the present invention.

FIG. 13 is an enlarged plan view showing a portion of the electrodeterminal of the semiconductor device according to the present invention.

FIGS. 14 A to F are cross-sectional views showing a process formanufacturing the semiconductor device of the present invention.

FIG. 15A is a plan view showing a schematic configuration of aconventional semiconductor device, FIG. 15B is a cross-sectional viewand FIG. 15C is a bottom view of the same.

FIG. 16A is a plan view showing a schematic configuration of anotherconventional semiconductor device, FIG. 16B is a cross-sectional viewand FIG. 16C is a bottom view of the same.

DETAILED DESCRIPTION OF THE INVENTION

According to a configuration of a semiconductor device of the presentinvention, a recess having a planar shape of a circle is formed on asurface of an electrode terminal with a connecting portion as aconfiguration for mitigating an external force applied to the electrodeterminal so as to avoid the peeling between the electrode terminal and asealing resin. By employing the circular recess, a size of the planarshape of the recess easily can be made smaller to a degree of about halfthe thickness of a lead frame. This is because when forming the leadframe by etching, since an etchant is retained in the circular recess,the etch rate thereof becomes low, so that the planar shape of thecircular recess does not expand. Thereby, while a function ofsuppressing the peeling between the electrode terminal and the sealingresin can be maintained sufficiently, the electrode terminal can beshortened.

In the above configuration, the recess further may be formed between anend portion of the electrode terminal on a side facing the semiconductorelement and the connecting portion. This configuration is effective foralleviating the stress concentration due to the thermal stress into theouter edge of the semiconductor element having high rigidity, when theouter edge of the semiconductor element and the end portion of theelectrode terminal are arranged in proximity to each other.

In the above configuration, an end portion of at least one of theelectrode terminals may be separated into a plurality of portions to beexposed from an outer edge side face of the sealing resin. With thisconfiguration, the electrode terminal can be supported with a lead framesecurely. At the same time, since the exposed surface at the end portionis separated into, for example, two portions, the exposed area can bereduced as compared with the continuously exposed surface, thusmitigating an influence by an external force.

In the above configuration, an end portion of each electrode terminalmay have a cross-sectional shape with an inclined or a step shaped endface so that an area of the surface with the connecting portion becomeslarger than an area of the external terminal surface.

Electrical connection between the semiconductor element and theelectrode terminals can be established by thin metal wirings or metalbumps.

In the above configuration, a plurality of the circular recesses may bearranged continuously in a transverse direction of each of the electrodeterminals. With this configuration, the effect for suppressing thepeeling between the electrode terminal and the sealing resin can beenhanced. In this case, the circular recesses can be arranged so thatadjacent recesses partially overlap each other. In order to enhance theeffect for suppressing the peeling between the electrode terminal andthe sealing resin, it is effective also to make a planar shape of an endportion of each of the electrode terminals at the surface with theconnecting portion in the form of a circular arc.

The following describes semiconductor devices according to embodimentsof the present invention and methods for manufacturing the same. In eachof the following embodiments, electrode terminals 5 have differentconfigurations, but the same reference numeral will be assigned theretofor the sake of clarity.

EMBODIMENT 1

Referring to FIGS. 1A to C, a semiconductor device according toEmbodiment 1 will be described below. FIG. 1A is a plan view showing aschematic configuration of the semiconductor device, FIG. 1B is across-sectional view and FIG. 1C is a bottom view of the same. In thissemiconductor device, an adhesive 3 is applied to a die pad 1 that issupported by a support lead 9, and a semiconductor element 2 is adheredthereon. On the periphery of the die pad 1, a plurality of electrodeterminals 5 are disposed. A top face of each electrode terminal 5 has aconnecting portion that is connected electrically with the semiconductorelement 2 via a thin metal wiring 4.

The die pad 1, the semiconductor element 2, the adhesive 3, the thinmetal wiring 4 and the electrode terminals 5 are sealed with a sealingresin 7. The sealing resin 7 is shaped in a quadrilateral flat plateform, and a rear face of the electrode terminal 5 on the opposite sidefrom the surface connected with the semiconductor element 2 is exposedfrom a bottom face of the sealing resin 7. An end face of the electrodeterminal 5 at an outer edge portion of the sealing resin 7 is exposedfrom a side face of the sealing resin 7 discontinuously from the rearface exposed from a bottom face of the sealing resin 7. That is to say,as shown in FIG. 1B, a corner 5 a of the electrode terminal 5 located ata boundary between the bottom face and the outer end face of the sealingresin 7 is removed so as to form a discontinuously exposed state. Asupport lead 9, as is evident from FIG. 1C, is half etched at a rearface thereof so as to be embedded in the sealing resin 7.

On the surface of the electrode terminal 5 connected with the thin metalwiring 4, a recess 8 having a planar shape of a circle is formed. Therecess 8 is arranged at two positions: between the connecting portionconnected with the thin metal wiring 4 and the end portion of theelectrode terminal 5 exposed from the outer edge side face of thesealing resin 7; and between the connecting portion and the end portionfacing the semiconductor element 2. The circular recess 8 functions soas to reduce the stress generated when dividing into the individualsemiconductor devices from a lead frame (not illustrated) and tosuppress the peeling between the electrode terminal 5 and the sealingresin 7 due to the stress generated before and after mounting the deviceinto a board, whereby a break in the thin metal wiring 4 can be avoided.

By employing the circular recess 8 instead of the conventional groove inorder to suppress the peeling, the size of the planar shape of therecess 8 can be made smaller to a degree of about half the thickness ofthe lead frame. This is because when forming the lead frame by etching,since an etchant is retained in the recess 8, the etch rate thereofbecomes low, so that the planar shape of the recess does not expand.Thereby, the peeling between the electrode terminal 5 and the sealingresin 7 can be suppressed, thus realizing a configuration forsuppressing a break in the thin metal wiring 4, and at the same time theelectrode terminal 5 can be shortened, thus facilitating furtherminiaturization of the semiconductor device.

As shown in FIG. 1C, for the purpose of making the semiconductor devicethinner and enhancing the heat dissipation capability, a rear face ofthe die pad 1 on the opposite side from the semiconductordevice-mounting surface may be exposed from the sealing resin 7.Alternatively, by bending the support lead 9 supporting the die pad 1,the die pad 1 may be embedded in the sealing rein 7 so as not to beexposed from the bottom face of the sealing resin 7 (not illustrated).

The electrical connection between the semiconductor element 2 and theelectrode terminal 5 may be established by means of a metal bump 4 amade of Au or solder as shown in FIGS. 2A and B, instead of the thinmetal wiring 4 illustrated in FIGS. 1A and B. In addition, as shown inFIG. 2B, the electrode terminal 5 may be shaped to have an inclinedplane 5 b or a step (not illustrated) at an end face of thecross-sectional shape. With this configuration, an area becomes largerat a surface contributing to the electrical connection than at a surfaceexposed from the bottom face of the sealing resin 7, so that theadherence between the electrode terminal 5 and the sealing resin 7further can be enhanced.

FIG. 3 is a plan view of a lead frame 10 used for manufacturing thesemiconductor device illustrated in FIGS. 1A to C. In this drawing,reference numerals 11 and 12 denote an outer frame and an inner frame,respectively.

EMBODIMENT 2

Referring to FIGS. 4A to C, a semiconductor device according toEmbodiment 2 will be described below. FIG. 4A is a plan view showing aschematic configuration of the semiconductor device, FIG. 4B is across-sectional view and FIG. 4C is a bottom view of the same. Sincethis semiconductor device has a basic configuration similar to that ofthe device according to Embodiment 1, the following description willfocus on the difference from Embodiment 1. The planar shape of theelectrode terminal 5 in the device according to Embodiment 1 is arectangle, whereas the device of this embodiment has a different planarshape. As shown in FIG. 4A or 4C, an end portion of the electrodeterminal 5 facing a semiconductor element 2 is shaped in a form of acircular arc. This configuration can prevent the concentration of thestress generated on the side of the electrode terminal 5 facing thesemiconductor element 2. Besides, an area of the electrode terminal 5 inthe planar shape becomes smaller, so that the adherence between theelectrode terminal 5 and the sealing resin 7 can be enhanced as comparedwith Embodiment 1, which allows a semiconductor device with betterqualities to be provided.

The shape of the portion of the electrode terminal 5 exposed from thebottom face of the sealing resin 7 is not limited to an ellipse asillustrated in FIG. 4C, and only an end portion facing the semiconductorelement 2 may be shaped in a form of a circular arc.

EMBODIMENT 3

Referring to FIGS. 5A to C, a semiconductor device according toEmbodiment 3 will be described below. FIG. 5A is a plan view showing aschematic configuration of the semiconductor device, FIG. 5B is across-sectional view and FIG. 5C is a bottom view of the same. Sincethis semiconductor device has a basic configuration similar to that ofthe device according to Embodiment 2, the following description willfocus on the difference from Embodiment 2. This embodiment is differentfrom Embodiment 2 in the number of circular recesses 8.

In Embodiment 2, at each of the two positions: between the connectingportion connected with the thin metal wiring 4 and the end portion ofthe electrode terminal 5 exposed from the outer edge side face of thesealing resin 7; and between the connecting portion and the end portionfacing the semiconductor element 2, one recess 8 is arranged. InEmbodiment 3 on the other hand, at each of the two positions, twocircular recesses 8 are provided. These arranged two recesses 8 areformed to be connected with each other at their lateral portions. Thatis, portions of the circles overlap one another. The width of theoverlapped portion of the recesses 8 is smaller than a diameter of therecess 8. Even when the width of the electrode terminal 5 is larger (0.3mm or more), as compared with Embodiment 2, this configuration canfacilitate the miniaturization of the semiconductor device without lossof the effect for suppressing the peeling between the electrode terminal5 and the sealing resin 7.

EMBODIMENT 4

Referring to FIGS. 6A to C, a semiconductor device according toEmbodiment 4 will be described below. FIG. 6A is a plan view showing aschematic configuration of the semiconductor device, FIG. 6B is across-sectional view and FIG. 6C is a bottom view of the same. Sincethis semiconductor device has a basic configuration similar to that ofthe device according to Embodiment 1, the following description willfocus on the difference from Embodiment 1. This embodiment is differentfrom Embodiment 1 in the arranged position of the circular recesses 8.

In Embodiment 1, at each of the two positions: between the connectingportion connected with the thin metal wiring 4 and the end portion ofthe electrode terminal 5 exposed from the outer edge side face of thesealing resin 7; and between the connecting portion and the end portionfacing the semiconductor element 2, a recess 8 is arranged. On the otherhand, in this embodiment, a recess 8 is arranged only at one positionbetween the connecting portion connected with the thin metal wiring 4and the end portion of the electrode terminal 5 exposed from the outeredge side face of the sealing resin 7.

In Embodiment 1, the recess 8 on the electrode terminal 5 formed betweenthe connecting portion and the end portion facing the semiconductorelement 2 mainly functions so as to alleviate the stress generated whenthe device is mounted on the board and after the mounting. This functionis effective, when the outer edge of the semiconductor element 2 isarranged in proximity to the end portion of the electrode terminal 5facing the semiconductor element 2, for alleviating the stressconcentration due to the thermal stress into the outer edge of thesemiconductor element 2 having high rigidity. Whereas, the configurationof this embodiment is suitable for the case where the outer edge of thesemiconductor element 2 is not arranged in proximity to the end portionof the electrode terminal 5 facing the semiconductor element 2, but isarranged so as to have a space interval of 200 μm or more therebetween.In such a case, there is no need to provide a circular recess 8 on theelectrode terminal 5 between the connecting portion and the end portionfacing the semiconductor element 2. As a result, the electrode terminal5 further can be shortened as compared with Embodiment 1, thusfacilitating the miniaturization of the semiconductor device.

EMBODIMENT 5

Referring to FIGS. 7A to C, a semiconductor device according toEmbodiment 5 will be described below. FIG. 7A is a plan view showing aschematic configuration of the semiconductor device, FIG. 7B is across-sectional view and FIG. 7C is a bottom view of the same. The shapeof an electrode terminal 5 of this embodiment is wider than those of theabove-described embodiments, and an end portion located at an outer edgeside face of a sealing resin 7 is separated into two portions to beexposed. Like the device of Embodiment 4, circular recesses 8 arearranged only at a position between the connecting portion connectedwith the thin metal wiring 4 and the end portion of the electrodeterminal 5 exposed from the outer edge side face of the sealing resin 7.However, the respective recesses 8 are arranged so as to correspond tothe respective two exposed portions at the end portion of the electrodeterminal 5. Note here that although a die pad 1, the semiconductorelement 2 and a support lead 9 have different shapes than theabove-stated embodiments, the same reference numerals are assignedthereto for the sake of clarity.

This configuration is advantageous when the width of the electrodeterminal 5 is large (e.g., 0.4 mm or more) and therefore it is difficultto support the electrode terminal 5 with one position of the end portionof a lead frame, or when the lead frame is so thin that it cannotsupport the electrode terminal at one position in terms of the strength.With this configuration, the electrode terminal 5 can be supportedsecurely with the end portion and at the same time the divided exposedsurface at the end portion allows a reduction in the exposed area ascompared with the continuously exposed surface, thus mitigating aninfluence by an external force. Although this effect is independent ofthe provision of the circular recess 8, the above-describedconfiguration is suitable for obtaining both of the effects. Therefore,while the effect of suppressing the peeling between the electrodeterminal 5 and the sealing resin 7 can be secured sufficiently, thesemiconductor device can be miniaturized.

The positions of the end portion of the electrode terminal 5 exposedfrom the outer edge surface of the sealing resin 7 are not limited totwo positions, and a plurality of position may be exposed depending onthe shape of the electrode terminal 5.

EMBODIMENT 6

Referring to FIGS. 8A to C, a semiconductor device according toEmbodiment 6 will be described below. FIG. 8A is a plan view showing aschematic configuration of the semiconductor device, FIG. 8B is across-sectional view and FIG. 8C is a bottom view of the same. Althoughthis semiconductor device has a basic configuration similar to that ofthe device according to Embodiment 5, a circular recess 8 is arranged ina different manner from Embodiment 5.

In Embodiment 5, the end portion of the electrode terminal 5 is exposedat two positions from the outer edge side face of the sealing resin 7,and one recess 8 is arranged so as to correspond to each of the twoexposed end portions. On the other hand, in this embodiment, circularrecesses 8 are arranged at a similar position but a plurality ofrecesses 8 are arranged transversely of the electrode terminal 5irrespective of the number of portions of the electrode terminal 5exposed from the sealing resin 7. The plurality of circular recesses 8are connected so that adjacent recesses partially overlap each other.Although the recesses are illustrated as a groove having a straight-linecontour in the drawings, they actually form a groove having a wavycontour configured by partially overlapping the plurality of circles.

With this configuration, a top surface of the electrode terminal 5 isseparated completely into two portions by the groove made up of theplurality of connected recesses 8, and therefore the effect ofsuppressing the peeling between the electrode terminal 5 and the sealingresin 7 is improved.

As shown in FIG. 8A, when a plurality of end portions of the electrodeterminal 5 arranged at a corner are exposed from different sides of thesealing resin 7, the groove made up of the plurality of connectedcircular recesses 8 may be shaped in a general form of a letter L.

The following describes a method for forming an electrode terminalportion of a lead frame that is used for manufacturing the semiconductordevices according to Embodiments 5 and 6 when the lead frame is formedby etching, with reference to FIGS. 9 to 11. FIG. 9 shows a case of theconventional semiconductor device, and FIGS. 10 and 11 show cases of thesemiconductor devices of Embodiments 5 and 6, respectively.

FIG. 9A is a plan view showing a surface-side resist pattern 13 of anelectrode terminal portion in the conventional example. FIG. 9B is aplan view showing a schematic configuration of the electrode terminal 5.FIGS. 9C to E are cross-sectional views showing states before etching,during etching and after etching, respectively. For ease of thecomparison with the present invention, the conventional example of FIG.9 illustrates not the shape of the electrode terminal 5 shown in FIG. 16but the shape similar to those of the electrode terminals 5 ofEmbodiments 5 and 6.

FIG. 10A is a plan view showing a surface-side resist pattern 13 of anelectrode terminal portion of Embodiment 5. FIG. 10B is a plan viewshowing a schematic configuration of the electrode terminal 5. FIGS. 10Cto E are cross-sectional views showing states before etching, duringetching and after etching, respectively.

FIG. 11A is a plan view showing a surface-side resist pattern 13 of anelectrode terminal portion of Embodiment 6. FIG. 11B is a plan viewshowing a schematic configuration of the electrode terminal 5. FIGS. 11Cto E are cross-sectional views showing states before etching, duringetching and after etching, respectively.

When the electrode terminal 5 of the conventional semiconductor deviceis formed by etching, the surface-side resist pattern 13 having atransverse groove as shown in FIG. 9A and a rear face-side resistpattern 14 (a plan view of the same is not illustrated) are, as shown inFIG. 9C, disposed on both surfaces of the electrode terminal 5. Then, asshown in FIG. 9D, etching is started from the surface side and the rearface side. A portion of the surface-side resist pattern 13 contributingto the formation of the groove 6 is formed to have a uniform width andthis portion extends over the width of the electrode terminal 5 from endto end, so that an etchant flows smoothly at this portion. Therefore, asshown in FIG. 9E, the width of the groove 6 becomes larger than thewidth of the groove portion of the surface-side resist pattern 13. As aresult, as shown in FIG. 9B, the groove 6 assumes a width correspondingto the width of the lead frame.

In the case of Embodiment 5, a surface-side resist pattern 13 shown inFIG. 10A is provided with circular patterns for forming the circularrecesses 8 so as to correspond to portions 13 a and 13 b for forming theexposed end portions of the electrode terminal 5. As shown in FIG. 10D,during the etching, since portions to be etched through these circularpatterns do not extend over the width of the electrode terminal 5 fromend to end, an etchant is retained in the respective circles. Therefore,the etch rate becomes low, and as shown in FIG. 10E, the etching amountsin the radial direction and the depth direction of the circles are lessthan the conventional example of FIG. 9E. As a result, as shown in FIG.10B, the size of the recess 8 can be kept small.

In the case of Embodiment 6, a surface-side resist pattern 13 shown inFIG. 11A is provided with circular patterns so as to correspond to theshape of the circular recesses 8 being connected transversely. Thecircular patterns are arranged so that the outer edges of adjacentcircles contact with each other. In this case also, an etchant isretained in the respective circle patterns, and therefore, as shown inFIG. 11E, the etching amounts in the radial direction and the depthdirection of the circles are small. As a result, as shown in FIG. 11B,the width of the groove formed with connected recesses 8 can be keptsmall.

The etching amount of Embodiment 5 is smaller than Embodiment 6, becausethe etchant is likely to be retained more in the respective circularpatterns.

The following describes a process for manufacturing a lead frame usedfor the semiconductor devices of the present invention, with referenceto FIGS. 12A to C. Firstly, as shown in FIG. 12A, a raw material for alead frame 10 is prepared. As a material of the lead frame, a Cu alloywith a thickness of about 0.1 to 0.2 mm and with relatively good thermalconductivity and a high strength may be used. By using a material withgood thermal conductivity, heat generated by the dicing processing canbe dissipated easily, and by using a material with a high strength,loading of a blade during the dicing processing can be prevented.

Next, as shown in FIG. 12B, a die pad 1, an electrode terminal 5 and thelike are formed with respect to the lead frame material by etching, anda Pd coating (not illustrated) is applied all over the lead frame 10.The Pd coating is made up of three layers including Ni, Pd and Au, andAu flash is applied to the outermost layer, whereby a favorableadherence with the sealing resin can be obtained. During the etchingprocess, a circular recess (not illustrated) is formed on a surface ofthe electrode terminal 5.

Next, as shown in FIG. 12C, a polyimide tape 15 having a double layerstructure including an adhesive such as a thermoplastic adhesive isattached to a rear face of the lead frame 10. This tape 15 is attachedso as to, during the sealing with a resin, prevent the resin fromrunning to the rear face of the electrode terminal 5. In this way, thelead frame used for the semiconductor devices of the present inventioncan be completed.

The following describes dimensions such as outer dimensions of thecircular recess formed in the process shown in FIG. 12B, with referenceto FIG. 13. FIG. 13 is an enlarged plan view showing a portion of theelectrode terminal 5. In the case that the lead frame material is 0.2 mmin thickness, the outer diameter d of the recess 8 can be formed to beabout 0.1 mm or smaller. Therefore, the electrode terminal 5correspondingly can be made shorter. As for the position of the outsiderecess 8, considering, for example, the misalignment during the dicingprocessing for dividing into the individual semiconductor devices, adistance S1 from the outer edge of the semiconductor device is set atabout 0.05 to 0.1 mm. As for the length for connection with the thinmetal wiring 4, about 0.1 to 0.2 mm is secured. As a result, in theconfiguration of the recess 8 being arranged at one position and in thecase of the thickness of the lead frame material being 0.2 mm, thelength of the electrode terminal 5 can be made 0.25 to 0.4 mm.

As shown in FIG. 13, when a recess 8 is provided also on the side facingthe semiconductor element as well as the outside recess 8, a distance S2between the two recesses 8 is set at 0.1 to 0.2 mm with considerationgiven to the connection with the thin metal wiring 4. A distance S3 fromthe recess 8 to the end portion of the electrode terminal 5 facing thesemiconductor element 2 is set at about 0.05 to 0.1 mm. As a result, inthe case of the thickness of the lead frame material being 0.2 mm, thelength of the electrode terminal 5 can be made 0.3 to 0.5 mm.

The following describes a process for manufacturing the semiconductordevice of the present invention using the above-described lead frame 10,with reference to FIGS. 14A to F. FIG. 14A shows a process of applyingan adhesive, FIG. 14B shows a process of mounting a semiconductorelement, FIG. 14C shows a process of connecting a thin metal wiring,FIG. 14D shows a process of resin sealing, FIG. 14 E shows a process ofpeeling a tape from the rear face of the lead frame and FIG. 14F shows aprocess of dividing into individual semiconductor devices.

Firstly, as shown in FIG. 14A, an adhesive 3 is applied on a die pad 1by means of a dispenser (not illustrated) or the like. The adhesive 3,for example, includes a silver paste in which Ag powder is mixed with athermosetting epoxy resin. Next, as shown in FIG. 14B, a semiconductorelement 2 is mounted on the die pad 1 to which the adhesive has beenapplied by means of a collet (not illustrated), followed by heating on aheat stage (not illustrated) to cure the adhesive 3. As one example, thesemiconductor element 2 is made of a silicon single crystal with athickness of about 0.1 to 0.2 mm. The heating condition is, for example,at 200 to 250° C. for 30 to 60 seconds.

Next, as shown in FIG. 14C, a bonding pad (not illustrated) on thesemiconductor element 2 adhered onto the die pad 1 and the electrodeterminal 5 are connected electrically with each other by means of a thinmetal wiring 4. A suction hole is provided in a heat stage (notillustrated) of a wire bonding apparatus, whereby a tape 15 on the rearface of the lead frame is fixed by vacuum. Then, while an outer edgeportion of the bonding area of the lead frame is fixed with a retainingjig (not illustrated), wire bonding is conducted. As one example of thethin metal wiring, an Au wire with a diameter of 20 to 25 μm is used.

Next, as shown in FIG. 14D, resin sealing is conducted collectively withrespect to a plurality of semiconductor devices using a transferapparatus equipped with a sealing mold (not illustrated) heated at about180° C. and damped with a cylinder. Since the tape 15 is attached to therear face of the lead frame 10, the sealing resin is prevented fromrunning to the rear face of the electrode terminal 5 during the resinsealing. After the resin is cured to form a sealing resin 7, the mold isopened and the sealing resin 7 is removed from the transfer apparatus.Then, post-curing is conducted on the sealing resin 7 in the curing ovenor the like while applying a pressure thereto using a weight or thelike. As one example, the applied pressure is about 1 g/mm².

Next, as shown in FIG. 14E, the tape 15 is peeled off from the sealedand molded member while applying heat at about 200° C. In this process,by peeling the tape 15 while keeping an angle with respect to thesealing resin 7 as small as possible, the stress during the peeling canbe reduced.

Next, as shown in FIG. 14F, the member is divided into individualsemiconductor devices by means of a dicing apparatus (not illustrated).The sealed and molded member is attached to a UV sheet (not illustrated)attached to a ring so as to be fixed, and is cut using a blade. As theblade, for example, a blade made by electroforming and with a thicknessof about 0.25 to 0.3 mm is used.

The invention may be embodied in other forms without departing from thespirit or essential characteristics thereof. The embodiments disclosedin this application are to be considered in all respects as illustrativeand not limiting. The scope of the invention is indicated by theappended claims rather than by the foregoing description, and allchanges which come within the meaning and range of equivalency of theclaims are intended to be embraced therein.

1. A semiconductor device, comprising: a semiconductor element; a diepad on which the semiconductor element is mounted; a plurality ofelectrode terminals, each of which has a connecting portion electricallyconnected with the semiconductor element; and a sealing resin forsealing the semiconductor element, the die pad and the electrodeterminals so that a surface of each of the plurality of electrodeterminals on an opposite side from a surface having the connectingportion is exposed from the sealing resin as an external terminalsurface, wherein a recess having a planar shape of a circle is formed onthe surface of each of the electrode terminals with the connectingportion, the recess being arranged between an end portion of theelectrode terminal exposed from an outer edge side face of the sealingresin and the connecting portion.
 2. The semiconductor device accordingto claim 1, wherein the recess further is formed between an end portionof the electrode terminal on a side facing the semiconductor element andthe connecting portion.
 3. The semiconductor device according to claim1, wherein an end portion of at least one of the electrode terminals isseparated into a plurality of portions to be exposed from an outer edgeside face of the sealing resin.
 4. The semiconductor device according toclaim 1, wherein an end portion of each electrode terminal has across-sectional shape with an inclined or a step shaped end face so thatan area of the surface with the connecting portion becomes larger thanan area of the external terminal surface.
 5. The semiconductor deviceaccording to claim 1, wherein electrical connection between thesemiconductor element and the electrode terminals is established by thinmetal wirings.
 6. The semiconductor device according to claim 1, whereinelectrical connection between the semiconductor element and theelectrode terminals is established by metal bumps.
 7. The semiconductordevice according to claim 1, wherein a plurality of the circularrecesses are arranged continuously in a transverse direction of each ofthe electrode terminals.
 8. The semiconductor device according to claim7, wherein the circular recesses are arranged so that adjacent recessespartially overlap each other.
 9. The semiconductor device according toclaim 1, wherein a planar shape of an end portion of each of theelectrode terminals at the surface with the connecting portion is in aform of a circular arc.